Real-space determination of atomic structure and bond relaxation at the <span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mrow><msub><mrow><mi mathvariant="normal">NiSi</mi></mrow><mrow><mn>2</mn></mrow></msub></mrow></math></span>-Si(111) interface

E. J. van Loenen; J. W. M. Frenken; J. F. van der Veen; S. Valeri

doi:10.1103/PhysRevLett.54.827

Real-space determination of atomic structure and bond relaxation at the ${NiSi}_{2}$ -Si(111) interface

E. J. van Loenen, J. W. M. Frenken, J. F. van der Veen, and S. Valeri

Phys. Rev. Lett. 54, 827 – Published 25 February 1985

Abstract

The atomic structure at the interface of a 180° rotated single-crystal ${NiSi}_{2}$ film on Si(111) has been determined by a new thin-film ion-channeling method, using ultrahigh depth resolution. The Ni atoms at the interface are found to be sevenfold coordinated. The bonds across the interface are slightly contracted.