Connecting Higher-Order Topology with the Orbital Hall Effect in Monolayers of Transition Metal Dichalcogenides

Marcio Costa, Bruno Focassio, Luis M. Canonico, Tarik P. Cysne, Gabriel R. Schleder, R. B. Muniz, Adalberto Fazzio, and Tatiana G. Rappoport
Phys. Rev. Lett. 130, 116204 – Published 17 March 2023
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Abstract

Monolayers of transition metal dichalcogenides (TMDs) in the 2H structural phase have been recently classified as higher-order topological insulators (HOTIs), protected by C3 rotation symmetry. In addition, theoretical calculations show an orbital Hall plateau in the insulating gap of TMDs, characterized by an orbital Chern number. We explore the correlation between these two phenomena in TMD monolayers in two structural phases: the noncentrosymmetric 2H and the centrosymmetric 1T. Using density functional theory, we confirm the characteristics of 2H TMDs and reveal that 1T TMDs are identified by a Z4 topological invariant. As a result, when cut along appropriate directions, they host conducting edge states, which cross their bulk energy-band gaps and can transport orbital angular momentum. Our linear response calculations thus indicate that the HOTI phase is accompanied by an orbital Hall effect. Using general symmetry arguments, we establish a connection between the two phenomena with potential implications for orbitronics and spin orbitronics.

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  • Received 10 May 2022
  • Revised 18 November 2022
  • Accepted 13 February 2023

DOI:https://doi.org/10.1103/PhysRevLett.130.116204

© 2023 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Marcio Costa1,*, Bruno Focassio2,3, Luis M. Canonico4, Tarik P. Cysne1, Gabriel R. Schleder5, R. B. Muniz1, Adalberto Fazzio2,3, and Tatiana G. Rappoport6,7

  • 1Instituto de Física, Universidade Federal Fluminense, 24210-346 Niterói, Rio de Janeiro, Brazil
  • 2Federal University of ABC (UFABC), 09210-580 Santo André, São Paulo, Brazil
  • 3Ilum School of Science, CNPEM, 13083-970 Campinas, São Paulo, Brazil
  • 4Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, 08193 Barcelona, Spain
  • 5John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, USA
  • 6Instituto de Telecomunicações, Instituto Superior Tecnico, University of Lisbon, Avenida Rovisco Pais 1, Lisboa, 1049001 Portugal
  • 7Instituto de Física, Universidade Federal do Rio de Janeiro, Caixa Postal 68528, 21941-972 Rio de Janeiro, Rio de Janeiro, Brazil

  • *mjtcosta@id.uff.br

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Issue

Vol. 130, Iss. 11 — 17 March 2023

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