Abstract
We characterize a high-density sample of negatively charged silicon-vacancy () centers in diamond using collinear optical multidimensional coherent spectroscopy. By comparing the results of complementary signal detection schemes, we identify a hidden population of centers that is not typically observed in photoluminescence and which exhibits significant spectral inhomogeneity and extended electronic times. The phenomenon is likely caused by strain, indicating a potential mechanism for controlling electric coherence in color-center-based quantum devices.
- Received 23 May 2020
- Accepted 19 April 2021
DOI:https://doi.org/10.1103/PhysRevLett.126.213601
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