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Particle-Hole Symmetry and the Fractional Quantum Hall Effect in the Lowest Landau Level

W. Pan, W. Kang, M. P. Lilly, J. L. Reno, K. W. Baldwin, K. W. West, L. N. Pfeiffer, and D. C. Tsui
Phys. Rev. Lett. 124, 156801 – Published 15 April 2020
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Abstract

We report on detailed experimental studies of a high-quality heterojunction insulated-gate field-effect transistor (HIGFET) to probe the particle-hole symmetry of the fractional quantum Hall effect (FQHE) states about half-filling in the lowest Landau level. The HIGFET is specially designed to vary the density of a two-dimensional electronic system under constant magnetic fields. We find in our constant magnetic field, variable density measurements that the sequence of FQHE states at filling factors ν=1/3,2/5,3/7 and its particle-hole conjugate states at filling factors 1ν=2/3,3/5,4/7 have a very similar energy gap. Moreover, a reflection symmetry can be established in the magnetoconductivities between the ν and 1ν states about half-filling. Our results demonstrate that the FQHE states in the lowest Landau level are manifestly particle-hole symmetric.

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  • Received 19 March 2019
  • Revised 14 December 2019
  • Accepted 19 March 2020

DOI:https://doi.org/10.1103/PhysRevLett.124.156801

© 2020 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

W. Pan1,2,3, W. Kang4, M. P. Lilly3, J. L. Reno3, K. W. Baldwin5, K. W. West5, L. N. Pfeiffer5, and D. C. Tsui5

  • 1Materials Physics Department, Sandia National Laboratories, Livermore, California 94551, USA
  • 2Quantum Phenomena Department, Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
  • 3Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
  • 4Department of Physics, University of Chicago, Chicago, Illinois 60637, USA
  • 5Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA

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Issue

Vol. 124, Iss. 15 — 17 April 2020

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