Electronic Properties of BaFe2As2 upon Doping and Pressure: The Prominent Role of the As p Orbitals

V. Balédent, F. Rullier-Albenque, D. Colson, J. M. Ablett, and J.-P. Rueff
Phys. Rev. Lett. 114, 177001 – Published 30 April 2015
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Abstract

Using high-resolution, lifetime removed, x-ray absorption spectroscopy at the As K edge, we evidence the strong sensitivity of the As electronic structure upon electron doping with Co or pressure change in BaFe2As2, at room temperature. Our results unravel the prominent role played by As-4p orbitals in the electronic properties of the Fe pnictide superconductors. We propose a unique picture to describe the overall effect of both external parameter doping and pressure, resolving the apparent contradiction between angle-resolved photoemission spectroscopy, transport, and absorption results, with the As-p states as a key ingredient.

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  • Received 15 July 2014

DOI:https://doi.org/10.1103/PhysRevLett.114.177001

© 2015 American Physical Society

Authors & Affiliations

V. Balédent1,*, F. Rullier-Albenque2, D. Colson2, J. M. Ablett3, and J.-P. Rueff3,4

  • 1Laboratoire de Physique des Solides, 91400 Orsay, France
  • 2SPEC CEA l’Orme les merisiers, 91191 Gif-sur-Yvette Cedex, France
  • 3Synchrotron SOLEIL, L’Orme des Merisiers, BP 48 Saint-Aubin, 91192 Gif-sur-Yvette Cedex, France
  • 4Université Pierre et Marie Curie, LCPMR, CNRS UMR7619, 11 rue Pierre et Marie Curie, 75005 Paris, France

  • *Corresponding author. victor.baledent@u-psud.fr

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Issue

Vol. 114, Iss. 17 — 1 May 2015

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