Lifetime-Enhanced Transport in Silicon due to Spin and Valley Blockade

G. P. Lansbergen, R. Rahman, J. Verduijn, G. C. Tettamanzi, N. Collaert, S. Biesemans, G. Klimeck, L. C. L. Hollenberg, and S. Rogge

Phys. Rev. Lett. 107, 136602 – Published 19 September 2011; Erratum Phys. Rev. Lett. 110, 049901 (2013)

Abstract

We report the observation of lifetime-enhanced transport (LET) based on perpendicular valleys in silicon by transport spectroscopy measurements of a two-electron system in a silicon transistor. The LET is manifested as a peculiar current step in the stability diagram due to a forbidden transition between an excited state and any of the lower energy states due to perpendicular valley (and spin) configurations, offering an additional current path. By employing a detailed temperature dependence study in combination with a rate equation model, we estimate the lifetime of this particular state to exceed 48 ns. The two-electron spin-valley configurations of all relevant confined quantum states in our device were obtained by a large-scale atomistic tight-binding simulation. The LET acts as a signature of the complicated valley physics in silicon: a feature that becomes increasingly important in silicon quantum devices.

Received 7 July 2011

DOI:https://doi.org/10.1103/PhysRevLett.107.136602

Erratum

Erratum: Lifetime-Enhanced Transport in Silicon due to Spin and Valley Blockade [Phys. Rev. Lett. 107, 136602 (2011)]

G. P. Lansbergen, R. Rahman, J. Verduijn, G. C. Tettamanzi, N. Collaert, S. Biesemans, G. Klimeck, L. C. L. Hollenberg, and S. Rogge

Phys. Rev. Lett. 110, 049901 (2013)

Authors & Affiliations

G. P. Lansbergen^1,*, R. Rahman², J. Verduijn^1,3, G. C. Tettamanzi^1,3, N. Collaert⁴, S. Biesemans⁴, G. Klimeck⁵, L. C. L. Hollenberg⁶, and S. Rogge^1,3

¹Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
²Advanced Device Technologies, Sandia National Laboratories, Albuquerque, New Mexico 87185, USA
³Centre for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, New South Wales 2052, Australia
⁴Inter-University Microelectronics Center (IMEC), Kapeldreef 75, 3001 Leuven, Belgium
⁵Network for Computational Nanotechnology, Purdue University, West Lafayette, Indiana 47907, USA
⁶Centre for Quantum Computation and Communication Technology, School of Physics, University of Melbourne, Melbourne, VIC 3010, Australia

^*Present address: NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0198, Japan. gabriel.lansbergen@lab.ntt.co.jp