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Electron-Beam Formation from Spin-Orbit Interactions in Zinc-Blende Semiconductor Quantum Wells

David H. Berman and Michael E. Flatté
Phys. Rev. Lett. 105, 157202 – Published 5 October 2010
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Abstract

We find a dramatic enhancement of electron propagation along a narrow range of real-space angles from an isotropic source in a two-dimensional quantum well made from a zinc-blende semiconductor. This “electron-beam” formation is caused by the interplay between spin-orbit interaction originating from a perpendicular electric field to the quantum well and the intrinsic spin-orbit field of the zinc-blende crystal lattice in a quantum well, in situations where the two fields are different in strength but of the same order of magnitude. Beam formation is associated with caustics and can be described semiclassically using a stationary phase analysis.

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  • Received 8 December 2009

DOI:https://doi.org/10.1103/PhysRevLett.105.157202

This article is available under the terms of the Creative Commons Attribution 3.0 License. Further distribution of this work must maintain attribution to the author(s) and the published article’s title, journal citation, and DOI.

© 2010 The American Physical Society

Authors & Affiliations

David H. Berman and Michael E. Flatté

  • Department of Physics and Astronomy, University of Iowa, Iowa City, Iowa 52242, USA

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Issue

Vol. 105, Iss. 15 — 8 October 2010

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