Substantial Crystalline Topology in Amorphous Silicon

J. M. Gibson, M. M. J. Treacy, T. Sun, and N. J. Zaluzec
Phys. Rev. Lett. 105, 125504 – Published 17 September 2010

Abstract

Using electron correlograph analysis we show that coherent nanodiffraction patterns from sputtered amorphous silicon indicate that there is more local crystallinity in unannealed amorphous silicon than was previously suspected. By comparing with simulations for various models we show that within a typical unannealed amorphous silicon film a substantial volume fraction (>50%) is topologically crystalline with correlation lengths up to 2 nm. Electron correlograph analysis is a variant of the fluctuation electron microscopy technique and its sensitivity to local crystalline ordering is derived from its sensitivity to four-body correlations.

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  • Received 20 July 2010

DOI:https://doi.org/10.1103/PhysRevLett.105.125504

© 2010 The American Physical Society

Authors & Affiliations

J. M. Gibson1, M. M. J. Treacy2,3,*, T. Sun1, and N. J. Zaluzec4

  • 1Advanced Photon Source, Argonne National Laboratory, 9700 South Cass Avenue, Argonne Illinois 60439, USA
  • 2Department of Physics, Arizona State University, Tempe, Arizona 85287, USA
  • 3Department of Materials, Parks Road, University of Oxford, Oxford, OX1 3PH, United Kingdom
  • 4Electron Microscopy Center, Materials Science Division, Argonne National Laboratory, 9700 South Cass Avenue, Argonne Illinois 60439, USA

  • *treacy@asu.edu

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Vol. 105, Iss. 12 — 17 September 2010

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