Time-Resolved Formation of Excitons and Electron-Hole Droplets in Si Studied Using Terahertz Spectroscopy

Takeshi Suzuki and Ryo Shimano
Phys. Rev. Lett. 103, 057401 – Published 31 July 2009
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Abstract

We investigated the formation dynamics of excitons and electron-hole (eh) droplets (EHDs) in Si by using broadband terahertz time-domain spectroscopy. The formation of indirect excitons in Si was studied by observing their 1S2P transition. Changes in surface plasmon resonance of the EHDs showed a gradual condensation from homogeneous eh plasma at eh densities above the exciton-Mott transition. Excitonic correlations were shown to exist prior to EHD condensation even above the Mott density.

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  • Received 23 February 2009

DOI:https://doi.org/10.1103/PhysRevLett.103.057401

©2009 American Physical Society

Authors & Affiliations

Takeshi Suzuki and Ryo Shimano

  • Department of Physics, The University of Tokyo, Tokyo 113-0033, Japan

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Vol. 103, Iss. 5 — 31 July 2009

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