Simple tight-binding theory for magnetoresistance in perfect sandwiched structures

H. G. Silva and Y. G. Pogorelov
Phys. Rev. B 78, 094428 – Published 30 September 2008

Abstract

Recent fabrication of atomic precision nanodevices for spintronics greatly boosted their performance and also revealed interesting features as oscillating magnetoresistance with a number of atomic layers in a multilayered structure. This motivates the need to go beyond the usual theoretical approach of semiclassical continuous layers. Here the simple tight-binding dynamics is used to describe quantum conduction in a multicomponent system with spin-polarized electrodes separated by an ultrathin and atomically coherent nonmagnetic spacer (either metallic or insulating). A possibility is indicated for obtaining a huge resonant enhancement of magnetoresistance in such device by a special choice of gate voltage on the spacer element.

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  • Received 20 February 2008

DOI:https://doi.org/10.1103/PhysRevB.78.094428

©2008 American Physical Society

Authors & Affiliations

H. G. Silva1,2 and Y. G. Pogorelov1

  • 1IFIMUP, Universidade do Porto, R. Campo Alegre, 687, Porto 4169-007, Portugal
  • 2CEOT, Universidade do Algarve, Campus de Gambelas, Faro 8005-139, Portugal

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Issue

Vol. 78, Iss. 9 — 1 September 2008

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