• Rapid Communication

Electric-field inversion asymmetry: Rashba and Stark effects for holes in resonant tunneling devices

H. B. de Carvalho, M. J. S. P. Brasil, V. Lopez-Richard, Y. Galvão Gobato, G. E. Marques, I. Camps, L. C. O. Dacal, M. Henini, L. Eaves, and G. Hill
Phys. Rev. B 74, 041305(R) – Published 18 July 2006

Abstract

We report electric-field-induced modulation of the spin splitting during the charging and discharging processes of a p-type GaAsAlAs double-barrier resonant-tunneling diode under an applied bias and magnetic field. In addition to the conventional Zeeman effect, we find experimental evidence of excitonic spin splitting produced by a combination of the Rashba spin-orbit interaction, the Stark effect, and the charge accumulation. The abrupt changes in the photoluminescence with the applied bias provide information about charge accumulation effects in the device.

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  • Received 19 January 2006

DOI:https://doi.org/10.1103/PhysRevB.74.041305

©2006 American Physical Society

Authors & Affiliations

H. B. de Carvalho1, M. J. S. P. Brasil2, V. Lopez-Richard3,*, Y. Galvão Gobato4, G. E. Marques4, I. Camps4, L. C. O. Dacal5, M. Henini6, L. Eaves6, and G. Hill7

  • 1Instituto Nacional de Telecomunicações, 37540-000, Santa Rita do Sapucaí, MG, Brazil
  • 2Grupo de Propriedades Ópticas, Instituto de Física Gleb Wataghin, Universidade de Campinas, 13083-970, Campinas, São Paulo, Brazil
  • 3Faculdade de Filosofia Ciências e Letras de Ribeirão Preto, Departamento de Física e Matemática, Universidade de São Paulo, 14040-901, Ribeirão Preto, São Paulo, Brazil
  • 4Universidade Federal de São Carlos, Departamento de Física, 13560-905, São Carlos, São Paulo, Brazil
  • 5Instituto de Estudos Avançados, IEAv-CTA, Caixa Postale 6044, 12231-970, São José dos Campos, São Paulo, Brazil
  • 6School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom
  • 7EPSRC National Centre for III-V Technologies, University of Sheffield, Mappin Street, Sheffield S1 3JD, United Kingdom

  • *Electronic address: vlopez@df.ufscar.br

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Issue

Vol. 74, Iss. 4 — 15 July 2006

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