In situ diffraction studies of the initial growth processes of textured icosahedral quasicrystalline thin films

P. R. Willmott, C. M. Schlepütz, R. Herger, B. D. Patterson, K. Hassdenteufel, and W. Steurer
Phys. Rev. B 71, 094203 – Published 14 March 2005

Abstract

The seeding and morphology of quasicrystalline TixNiyZr1xy thin films grown by pulsed-laser deposition on Al2O3(0001) have been investigated in situ, using in-plane x-ray diffraction and reflectivity with synchrotron radiation. The crystallinity of the final films was further studied ex situ using a laboratory x-ray source. Local icosahedral order becomes established after a film thickness of 1.5nm, which is followed by an abrupt change in the growth rate after a film thickness of approximately 5nm, as long-range quasicrystalline order begins to become energetically favorable. The films grow two-dimensionally even up to thicknesses of over 100nm and are highly textured, consisting of columnar grains with one of their fivefold symmetry axes perpendicular to the substrate surface.

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  • Received 19 October 2004

DOI:https://doi.org/10.1103/PhysRevB.71.094203

©2005 American Physical Society

Authors & Affiliations

P. R. Willmott1,*, C. M. Schlepütz1, R. Herger1, B. D. Patterson1, K. Hassdenteufel2, and W. Steurer2

  • 1Swiss Light Source, Paul Scherrer Institute, CH-5232 Villigen, Switzerland
  • 2Laboratory of Crystallography, Department of Materials, ETH-Hönggerberg, CH-8093 Zürich, Switzerland

  • *Electronic address: philip.willmott@psi.ch

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Vol. 71, Iss. 9 — 1 March 2005

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