Optical reflectance anisotropy of Al(110): Experiment and ab initio calculation

Th. Herrmann, M. Gensch, M. J. G. Lee, A. I. Shkrebtii, N. Esser, W. Richter, and Ph. Hofmann
Phys. Rev. B 69, 165406 – Published 19 April 2004
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Abstract

The reflectance anisotropy of a clean Al(110)-vacuum interface has been measured experimentally, and compared with the results of an ab-initio self-consistent full-potential linear augmented plane-wave calculation. Good agreement is found in the interband regime, while a discrepancy in the Drude regime is consistent with anisotropy in the intraband contribution. The calculated surface dielectric anisotropy and reflectance anisotropy of Al(110) are not significantly affected by surface relaxation, suggesting that optical transitions between surface states and surface resonances make only a minor contribution to the surface dielectric response. The measured reflectance anisotropy of Al(110) is found to be only weakly affected by oxidation and by the deposition of Ni overlayers, providing further evidence in support of this conclusion.

  • Received 16 October 2003

DOI:https://doi.org/10.1103/PhysRevB.69.165406

©2004 American Physical Society

Authors & Affiliations

Th. Herrmann1, M. Gensch2, M. J. G. Lee3, A. I. Shkrebtii4,*, N. Esser2, W. Richter1, and Ph. Hofmann5

  • 1Institut für Festkörperphysik, Technische, Universität Berlin, Hardenbergstrasse 36, 10623 Berlin, Germany
  • 2Institut für Spektrochemie und Angewandte Spektroskopie-Institutsteil Berlin, Albert-Einstein-Str. 9, 12489 Berlin, Germany
  • 3Department of Physics, University of Toronto, 60 St. George Street, Toronto, Ontario, Canada M5S 1A7
  • 4Faculty of Science, University of Ontario Institute of Technology, 2000 Simcoe Street North, Oshawa, Ontario, Canada L1H 7L7
  • 5University Aarhus, Inst. Storage Ring Facilities, DK-8000 Aarhus C, Denmark

  • *Corresponding author. Electronic address: Anatoli.Chkrebtii @uoit.ca

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Vol. 69, Iss. 16 — 15 April 2004

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