Abstract
-type ordering of InGaP grown lattice matched to GaAs was investigated by in situ reflectance anisotropy spectroscopy and reflection high-energy electron diffraction. The experiments have been performed during InGaP growth both via metal-organic vapor phase epitaxy and chemical beam epitaxy. Additionally, total energy calculations (TE) have been performed for differently ordered InGaP slabs. From both experiment and TE calculations we conclude that bulk ordering only occurs when InGaP growth is performed under phosphorus-rich -like surface conditions. Bulk ordering completely disappears under growth conditions which cause a less-phosphorus-rich -like surface dimer configuration. P dimers in the symmetry at the growth surface trigger the bulk ordering driven by an energy gain of 0.26 eV per surface atom according to our TE calculations.
- Received 1 April 1999
DOI:https://doi.org/10.1103/PhysRevB.60.8185
©1999 American Physical Society
