Raman spectroscopy of PbS nanocrystalline semiconductors

K. K. Nanda, S. N. Sahu, R. K. Soni, and S. Tripathy
Phys. Rev. B 58, 15405 – Published 15 December 1998
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Abstract

We have studied the effect of crystalline size and surface roughness on Raman intensity for PbS nanocrystalline semiconductors of different crystalline sizes prepared by an electrochemical route. Rutherford back scattering spectroscopy provides the estimation of surface roughness, thickness, and composition of the PbS samples. The Raman spectrum shows a low-frequency wing at 205cm1 besides the characteristic first order longitudinal optical phonon mode at 210cm1 when excited with a laser of wavelength 514.5 nm. The observed variation of the Raman shifts, widths, and intensities of these two peaks have been discussed as a function of crystalline size. The low frequency wing is identified as a surface phonon mode. In addition to these two peaks, a peak at 271cm1 and another at 415cm1 are observed in good agreement with earlier reported results.

  • Received 30 June 1998

DOI:https://doi.org/10.1103/PhysRevB.58.15405

©1998 American Physical Society

Authors & Affiliations

K. K. Nanda and S. N. Sahu*

  • Institute of Physics, Sachivalaya Marg, Bhubaneswar-751005, India

R. K. Soni and S. Tripathy

  • Laser Technology Programme, Indian Institute of Technology, New Delhi, India

  • *Electronic address: sahu@iopb.stpbh.soft.net

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Issue

Vol. 58, Iss. 23 — 15 December 1998

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