Abstract
Static electric-field domains as well as current self-oscillations due to domain-wall oscillations have been observed in undoped, type-II GaAs-AlAs superlattices under photoexcitation. Photoluminescence measurements clearly demonstrate the coexistence of low- and high-field domains in the static and oscillating domain voltage regime. A comparison with the calculated energy level distribution indicates that the static domains are connected with negative differential velocity (NDV) due to resonant transfer between in the AlAs layer and in the GaAs layer, while the oscillating domains are attributed to NDV originating from resonant tunneling between and in the AlAs layers. This observation demonstrates the importance of transport channels due to the indirect band structure of type-II superlattices.
- Received 22 February 1996
DOI:https://doi.org/10.1103/PhysRevB.54.R2323
©1996 American Physical Society