Abstract
Oxygen adsorption on a Cs-monolayer-covered Si(100) surface has been studied by ion spectroscopy and normally emitted secondary electron emission (SEE) spectroscopy. It is clearly shown that the oxygen lies above and below the Cs atoms, respectively, at low and high O exposures, disproving the dipole model for the work function change. The initial O adsorption induces a shoulder at the low-energy edge of the SEE spectra, indicating the existence of patches of a lower work function on the surface. The patches are explained as due to the Cs complexes formed by nonadiabatic chemisorption.
- Received 20 September 1996
DOI:https://doi.org/10.1103/PhysRevB.54.R17347
©1996 American Physical Society