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Interaction of oxygen with a Cs-monolayer-covered Si(100) surface

Q. B. Lu, R. Souda, D. J. O'Connor, and B. V. King
Phys. Rev. B 54, R17347(R) – Published 15 December 1996
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Abstract

Oxygen adsorption on a Cs-monolayer-covered Si(100) surface has been studied by Li ion spectroscopy and normally emitted secondary electron emission (SEE) spectroscopy. It is clearly shown that the oxygen lies above and below the Cs atoms, respectively, at low and high O exposures, disproving the dipole model for the work function change. The initial O adsorption induces a shoulder at the low-energy edge of the SEE spectra, indicating the existence of patches of a lower work function on the surface. The patches are explained as due to the CsO* complexes formed by nonadiabatic chemisorption.

  • Received 20 September 1996

DOI:https://doi.org/10.1103/PhysRevB.54.R17347

©1996 American Physical Society

Authors & Affiliations

Q. B. Lu

  • Department of Physics, The University of Newcastle, Callaghan, New South Wales 2308, Australia

R. Souda

  • National Institute for Research in Inorganic Materials, 1-1 Namiki, Tsukuba, Ibaraki 305, Japan

D. J. O'Connor and B. V. King

  • Department of Physics, The University of Newcastle, Callaghan, New South Wales 2308, Australia

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Vol. 54, Iss. 24 — 15 December 1996

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