Surfaces of Sn growing on InSb{111}A,B have been studied by using the reflection high-energy electron-diffraction intensity oscillation technique. The surfaces proceed in the formation of a bilayered lattice in the whole range of film thickness. However, the geometry of the outermost surface layer is quite different in both systems: The growing surface on InSb(111)A smoothens with the same period as the lattice formation, whereas on InSb(111)B, below and above 6 ML of Sn, smooth surfaces emerge every period of monolayer and bilayer, respectively. The monolayer-period change in surface geometry is ascribed to Sb segregation on the growing surface. © 1996 The American Physical Society.

• Received 8 February 1996

DOI:https://doi.org/10.1103/PhysRevB.54.10358