Using the method for calculating the band bending and concentration profiles of a multilevel impurity center in its different charge states within a semiconductor inhomogeneously doped with the impurity proposed in the preceding paper [X. Yang et al., Phys. Rev. B 53, 13 414 (1996)] to n-type GaP implanted with Ni and Fe ions, respectively, the results were obtained for the samples implanted and annealed under different conditions. Based on the results, a feasible explanation of the deep-level transient spectroscopy spectra of Ni ion-implanted n-type GaP was obtained and an analysis for the Mössbauer spectra of Fe ion-implanted n-type GaP was carried out. © 1996 The American Physical Society.

• Received 18 December 1995

DOI:https://doi.org/10.1103/PhysRevB.53.13419