Microscopic-scale lateral inhomogeneities of the GaSe-Ge heterojunction energy lineup

F. Gozzo; H. Berger; I. R. Collins; G. Margaritondo; W. Ng; A. K. Ray-Chaudhuri; S. Liang; S. Singh; F. Cerrina

doi:10.1103/PhysRevB.51.5024

Microscopic-scale lateral inhomogeneities of the GaSe-Ge heterojunction energy lineup

F. Gozzo, H. Berger, I. R. Collins, G. Margaritondo, W. Ng, A. K. Ray-Chaudhuri, S. Liang, S. Singh, and F. Cerrina

Phys. Rev. B 51, 5024 – Published 15 February 1995

Abstract

Scanning-photoemission-spectromicroscopy data revealed substantial inhomogeneities in the lineup of the electronic states at the interface between the two semiconductors GaSe and Ge. These inhomogeneities would lead to valence-band discontinuity changes from place to place, whose magnitude is approximately 0.4 eV.

Received 7 October 1994

DOI:https://doi.org/10.1103/PhysRevB.51.5024

Authors & Affiliations

F. Gozzo, H. Berger, I. R. Collins, and G. Margaritondo

Institut de Physique Appliquée, Ecole Polytechnique Fédérale, CH-1015 Lausanne, Switzerland

W. Ng, A. K. Ray-Chaudhuri, S. Liang, S. Singh, and F. Cerrina

Center for X-Ray Lithography, University of Wisconsin–Madison, Madison, Wisconsin 53706

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Vol. 51, Iss. 8 — 15 February 1995

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