The near-surface structure of low-energy- (0.5–1.5 keV) Ar-bombarded Si(100) has been studied using high-resolution x-ray-absorption near-edge structure spectroscopy and extended x-ray-absorption fine-structure spectroscopy with synchrotron radiation, medium-energy ion scattering, variable-energy positron-annihilation spectroscopy, and angle-resolved x-ray photoemission spectroscopy. The ion-induced defect structure for silicon, and the structure and distribution of incorporated Ar and silicon carbide formed during the dynamic mixing process are directly and nondestructively measured and depth profiled in the subnanometer scale. The results indicated that no Ar bubble was formed at moderate bombardment fluences (∼${10}^{16}$/${\mathrm{cm}}^2$) and that epitaxial recrystallization could be achieved by postbombardment vacuum annealing at 700 °C for 30 min.

• Received 7 July 1994

DOI:https://doi.org/10.1103/PhysRevB.50.18453