Resonant Raman scattering from mobile electrons in the fractional quantum Hall regime

P. M. Platzman and Song He
Phys. Rev. B 49, 13674 – Published 15 May 1994
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Abstract

We show that the resonant Raman cross section for the scattering of light from two-dimensional electrons in GaAs quantum wells in the fractional quantum Hall regime, to a good approximation, has a piece proportional to the projected structure factor and another piece coming from hole shakeup proportional to a specific higher-order structure factor. Exact numerical results for up to ten particles at all momentum transfers are presented and discussed.

  • Received 19 November 1993

DOI:https://doi.org/10.1103/PhysRevB.49.13674

©1994 American Physical Society

Authors & Affiliations

P. M. Platzman and Song He

  • AT&T Bell Laboratories, Murray Hill, New Jersey 07974

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Vol. 49, Iss. 19 — 15 May 1994

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