Hall effect in the organic conductor α-(BEDT-TTF)2KHg(SCN)4, where BEDT-TTF is bis(ethylenedithio)tetrathiafulvalene

T. Sasaki, S. Endo, and N. Toyota
Phys. Rev. B 48, 1928 – Published 15 July 1993
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Abstract

Hall-effect measurements below 20 K and up to 23 T on single crystals of the organic conductor α-(BEDT-TTF)2KHg(SCN)4 are reported. The sign of the Hall coefficient RH is positive in the whole temperature range, indicating a hole carrier. RH obtained from the H-linear dependence of the Hall resistance Rxy steeply increases below 10 K and saturates around 4 K. This increase in RH coincides with anomalies observed in the static magnetic susceptibility and the electrical resistance at about 10 K. This finding suggests a reconstruction of the Fermi surface associated with the spin-density-wave (SDW) gap formation in this magnetic-phase transition. The high-field Rxy above about 10 T at 4.2 K deviates from the H-linear dependence, suggesting that the SDW formation might change with fields.

  • Received 31 March 1993

DOI:https://doi.org/10.1103/PhysRevB.48.1928

©1993 American Physical Society

Authors & Affiliations

T. Sasaki, S. Endo, and N. Toyota

  • Institute for Materials Research, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980, Japan

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Vol. 48, Iss. 3 — 15 July 1993

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