Simulations of point-defect properties in graphite by a tight-binding-force model

C. H. Xu, C. L. Fu, and D. F. Pedraza
Phys. Rev. B 48, 13273 – Published 1 November 1993
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Abstract

Point-defect energetics and diffusion mechanisms in graphite are investigated using a semi-empirical tight-binding-force model. Possible diffusion processes associated with point-defect (i.e., vacancies and interstitials) and nondefect (i.e., atomic exchange) mechanisms are analyzed. It is found that self-diffusion in graphite in the direction parallel to the basal plane can be mediated by vacancies. However, since the calculated vacancy- and interstital-formation energies are nearly equal, it is argued that Frenkel pairs could exist as equilibrium defects. In this case, at high enough temperatures, self-diffusion parallel to the basal plane should occur by an interstitial mechanism because the migration energy of the interstitial is much lower.

  • Received 21 June 1993

DOI:https://doi.org/10.1103/PhysRevB.48.13273

©1993 American Physical Society

Authors & Affiliations

C. H. Xu, C. L. Fu, and D. F. Pedraza

  • Metals and Ceramics Division, Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, Tennessee 37831

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Issue

Vol. 48, Iss. 18 — 1 November 1993

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