Vertical transport through Landau levels in a GaAs/<span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mrow><msub><mrow><mi mathvariant="normal">Al</mi></mrow><mrow><mi mathvariant="italic">x</mi></mrow></msub></mrow></math></span><span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mrow><msub><mrow><mi mathvariant="normal">Ga</mi></mrow><mrow><mn>1</mn><mi mathvariant="normal">−</mi><mi mathvariant="italic">x</mi></mrow></msub></mrow></math></span>As superlattice in the presence of a parallel magnetic field

F. Piazza; L. Pavesi; H. Cruz; M. Micovic; C. Mendoça

doi:10.1103/PhysRevB.47.4644

Vertical transport through Landau levels in a GaAs/ ${Al}_{x}$ ${Ga}_{1 - x}$ As superlattice in the presence of a parallel magnetic field

F. Piazza, L. Pavesi, H. Cruz, M. Micovic, and C. Mendoça

Phys. Rev. B 47, 4644 – Published 15 February 1993

Abstract

Vertical transport through a short-period superlattice in the presence of a parallel magnetic field has been measured with an all-optical technique by use of an enlarged well imbedded in a superlattice. Magnetic-field and power dependence of the transport have been found and interpreted by computing the quasi-Fermi-level of the photoexcited electron gas via the calculation of the density of states of a superlattice in a parallel magnetic field. The vertical transport is reduced by the formation of disorder-broadened Landau levels. By measuring photoluminescence excitation spectra, we have been able to demonstrate the energy dependence of transport through Landau levels.