Ultrafast thermalization of photoexcited carriers in polar semiconductors

Lucio Rota, Paolo Lugli, Thomas Elsaesser, and Jagdeep Shah
Phys. Rev. B 47, 4226 – Published 15 February 1993
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Abstract

We present a combined experimental and theoretical study of ultrafast thermalization of high-energy carriers photogenerated by femtosecond laser excitation in GaAs and InP. Luminescence up-conversion is used to monitor the spectral and temporal evolution of the carrier distribution with a time resolution of about 100 fs. A rapid redistribution of electrons and holes over a wide energy range is found within the first 100 fs after excitation. The experimental results are analyzed by Monte Carlo simulations including a molecular-dynamics scheme to describe the carrier kinetics. We show that the Coulomb interaction among carriers is responsible for the initial ultrafast thermalization.

  • Received 24 August 1992

DOI:https://doi.org/10.1103/PhysRevB.47.4226

©1993 American Physical Society

Authors & Affiliations

Lucio Rota

  • Dipartimento di Fisica, Università di Modena, Via Campi 213/A, 41100 Modena, Italy

Paolo Lugli

  • Dipartimento di Ingegneria Elettronica, II. Università di Roma ‘‘Tor Vergata,’’ Via della Ricerca Scientifico, 00173 Roma, Italy

Thomas Elsaesser

  • Physik Department E11, Technische Universität München, D-8046 Garching, Germany

Jagdeep Shah

  • AT&T Bell Laboratories, Holmdel, New Jersey 07733

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Issue

Vol. 47, Iss. 8 — 15 February 1993

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