Magnetic-field-induced resonant behavior of two-phonon Raman scattering in semiconductors with equal effective masses for electrons and holes

V. I. Belitsky, M. Cardona, and A. Cantarero
Phys. Rev. B 47, 3626 – Published 15 February 1993
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Abstract

The total amplitude of the two-phonon resonant Raman scattering in a high magnetic field is calculated in a model with uncorrelated electrons and holes having equal effective masses (InBr,InI, light-hole-to-electron transitions in GaAs). The importance of the role of this mechanism compared to the scattering via the discrete states of hot excitons is discussed. The cross section as a function of magnetic field and (or) laser frequency shows resonances resulting from electron and hole transitions to the vicinity of the Landau-band bottom in the real intermediate states. The influence of lifetimes of incoming and outgoing transitions in the scattering efficiency is discussed.

  • Received 20 May 1992

DOI:https://doi.org/10.1103/PhysRevB.47.3626

©1993 American Physical Society

Authors & Affiliations

V. I. Belitsky and M. Cardona

  • Max-Planck-Institut für Festköperforschung, Heisenbergstrasse 1, D-7000 Stuttgart 80, Federal Republic of Germany

A. Cantarero

  • Departamento de Física Aplicado, Universidad de Valencia, Dr. Moliner 50, E-46100 Burjasot, Valencia, Spain

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Vol. 47, Iss. 7 — 15 February 1993

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