Evolution of the in-gap state in high-Tc cuprates

Y. Ohta, K. Tsutsui, W. Koshibae, T. Shimozato, and S. Maekawa
Phys. Rev. B 46, 14022 – Published 1 December 1992
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Abstract

An exact diagonalization technique on small lattices is used to calculate the single-particle spectral function A(k,ω) for one- and three-band Hubbard models at various parameter values and doping rates, thereby examining the low-energy electronic structure (or in-gap state) of the doped CuO2 plane in high-Tc superconducting cuprates. It is illustrated that, by carrier doping, the dispersive state of the charge excitation gap at half filling undergoes a strongly momentum-dependent spectral-weight transfer, and evolves into the new state with a free-electron-like dispersion that forms the in-gap state characteristic of a large Fermi surface consistent with Luttinger’s sum rule. The quasiparticlelike band narrowing observed is shown to depend sensitively on the parameter values and doping rate.

  • Received 21 July 1992

DOI:https://doi.org/10.1103/PhysRevB.46.14022

©1992 American Physical Society

Authors & Affiliations

Y. Ohta, K. Tsutsui, W. Koshibae, T. Shimozato, and S. Maekawa

  • Department of Applied Physics, Nagoya University, Nagoya 464-01, Japan

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Issue

Vol. 46, Iss. 21 — 1 December 1992

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