Hydrogenated Si clusters: Band formation with increasing size

Shang Yuan Ren and John D. Dow
Phys. Rev. B 45, 6492 – Published 15 March 1992
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Abstract

The electronic structures of various Si clusters of different sizes (with hydrogenated surfaces) are evaluated using a nearest-neighbor empirical tight-binding Hamiltonian which describes well the band structure and fundamental band gap of crystalline silicon. The largest cluster contains 3109 Si atoms and 852 H atoms, has a diameter of 49 Å, and has both a normalized Si density of states and a band gap very close to those of crystalline Si.

  • Received 7 May 1990

DOI:https://doi.org/10.1103/PhysRevB.45.6492

©1992 American Physical Society

Authors & Affiliations

Shang Yuan Ren

  • Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556
  • Department of Physics, University of Science and Technology of China, Hefei 230 026 China
  • Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287-1504

John D. Dow

  • Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556
  • Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287-1504

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Vol. 45, Iss. 12 — 15 March 1992

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