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Quantized conductance in a long silicon inversion wire

Y. S. Tang, G. Jin, J. H. Davies, J. G. Williamson, and C. D. W. Wilkinson
Phys. Rev. B 45, 13799(R) – Published 15 June 1992
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Abstract

Quantized conductance with a step size of less than e2/h, which increases linearly with increasing perpendicular magnetic field, and resonant tunneling through an impurity state in a long silicon inversion wire have been observed at 4.2 K. This is approximately understood by considering a quantum point contact, an impurity state, and a large gate-voltage-dependent resistor in series.

  • Received 9 March 1992

DOI:https://doi.org/10.1103/PhysRevB.45.13799

©1992 American Physical Society

Authors & Affiliations

Y. S. Tang, G. Jin, J. H. Davies, J. G. Williamson, and C. D. W. Wilkinson

  • Nanoelectronics Research Center, Department of Electronics and Electrical Engineering, University of Glasgow, Glasgow G12 8QQ, Scotland

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Vol. 45, Iss. 23 — 15 June 1992

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