The adsorption of ${\mathrm{NH}}_3$ and NO on Si(100)-(2×1) surfaces at room temperature and the stepwise nitridation have been studied by high-resolution Si 2p core-level photoemission spectroscopy. Both molecules adsorb dissociatively, but only for NO does a reaction occur beyond the first monolayer. For the growth of stoichiometric silicon nitride, annealing to 1200 K is necessary.

• Received 6 March 1991

DOI:https://doi.org/10.1103/PhysRevB.44.1954