Abstract
The infrared light-induced electron-spin-resonance (LESR) data of Ristein et al. [Phys. Rev. B 40, 88 (1989)] are reinterpreted. A model of undoped hydrogenated amorphous silicon (a-Si:H) including more charged than neutral dangling-bond defects yields a natural explanation of the experimental results. These LESR data are the most direct experimental evidence to date for the existence of bulk charged dangling bonds in undoped a-Si:H at electronic equilibrium.
- Received 21 July 1989
DOI:https://doi.org/10.1103/PhysRevB.41.7887
©1990 American Physical Society
