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Electronic structure of grain boundaries

Erik C. Sowa, A. Gonis, X.-G. Zhang, and S. M. Foiles
Phys. Rev. B 40, 9993(R) – Published 15 November 1989
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Abstract

We report the first application of the recently developed real-space multiple-scattering theory to the calculation of the local density of states (DOS) at metallic grain boundaries. Our method treats properly the semi-infiite nature of the material on either side of the boundary. We exhibit and compare local DOS’s at selected sites for both unrelaxed and relaxed Σ5(100) 36.9° twist and Σ5(310) tilt grain boundaries in Cu, where the atomic coordinates of the relaxed configurations were obtained with the Embedded Atom Method.

  • Received 4 August 1989

DOI:https://doi.org/10.1103/PhysRevB.40.9993

©1989 American Physical Society

Authors & Affiliations

Erik C. Sowa and A. Gonis

  • Chemistry and Materials Science, L-356, Lawrence Livermore National Laboratory, Livermore, California 94550

X.-G. Zhang

  • Department of Physics and Astronomy, Northwestern University, Evanston, Illinois 60201

S. M. Foiles

  • Theory Division, Sandia National Laboratories, Livermore, California 94551-0969

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Vol. 40, Iss. 14 — 15 November 1989

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