The evolution on interfaces formed at 300 K by the deposition of atoms of Ti, Pd, Ag, and Au on cleaved GaP(110) has been studied using synchrotron-radiation photoemission. For Ti, Pd, and Au, metal deposition induces immediate disruption of the substrate and atomic intermixing. In contrast, Ag deposition at 300 K onto GaP(110) leads to cluster formation, and there is no observable surface disruption. Comparison of these results for atom condensation on GaP(110) to those for GaAs(110) and InP(110) indicates that the Ga and P redistribution and the formation of reaction products is indistinguishable, regardless of the particular semiconductor substrate.

• Received 17 April 1989

DOI:https://doi.org/10.1103/PhysRevB.40.4022