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Electron-spin resonance of Mn2+ in Ge-rich bismuth-modified amorphous semiconductors (Ge42S58)99.5xBixMn0.5

V. K. Bhatnagar, K. L. Bhatia, Vijay Yadav, and Nawal Kishore
Phys. Rev. B 39, 11203(R) – Published 15 May 1989
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Abstract

Electron-spin resonance spectra of Ge-rich Bi-modified amorphous (Ge42S58)99.5xBixMn0.5 (as prepared and annealed) have been observed by use of Mn2+ as a microprobe for the first time. The data on the g value and the line parameters in various samples studied show that the effects of addition of Bi to the Ge-rich composition Ge42S58 and to the sulfur-rich composition Ge20S80 are quite different, indicating a dissimilar microscopic environment. The behavior of the resonance line at g2 in the composition x=2 is quite different from that in x=0, 4 samples. Results are discussed in the light of the Phillips cluster model and constraint theory [J. C. Phillips, Phys. Rev. B 36, 4265 (1987)].

  • Received 3 October 1988

DOI:https://doi.org/10.1103/PhysRevB.39.11203

©1989 American Physical Society

Authors & Affiliations

V. K. Bhatnagar*, K. L. Bhatia, Vijay Yadav, and Nawal Kishore

  • Department of Physics, Maharshi Dayanand University, Rohtak-124 001 Haryana, India

  • *Permanent address: Physics Department, Vaish College, Bhiwani-125 021 India.

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Vol. 39, Iss. 15 — 15 May 1989

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