The secondary-electron yield has been measured for solid Xe films excited by (1–10)-keV x rays. High yields are observed due to the long escape depth for secondary electrons (∼1 μm). The measurements are discussed in terms of a one-dimensional diffusion model. The electron escape depth is found to be sensitive to the temperature at which the film is grown. The electron yield was found to exhibit a time dependence due to the combined effects of charging and radiation damage. A large increase in the yield was observed when an electric field was applied. Finally, the effects of added impurities, ${\mathrm{CO}}_2$ and propane, were investigated. It is demonstrated that solid Xe will be useful as a very sensitive x-ray photocathode.

• Received 8 August 1988

DOI:https://doi.org/10.1103/PhysRevB.39.1