Ordered-defect structure in epitaxial YBa2Cu3O7x thin films

A. F. Marshall, R. W. Barton, K. Char, A. Kapitulnik, B. Oh, R. H. Hammond, and S. S. Laderman
Phys. Rev. B 37, 9353 – Published 1 June 1988
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Abstract

An ordered defect structure in superconducting Y-Ba-Cu-O thin films has been characterized by both x-ray diffraction and transmission electron microscopy. The defect structure, which is observed growing epitaxially within the grains of normal YBa2Cu3O7x structure, has the diffraction characteristics of a distinct phase whose volume fraction can be correlated with changes in film composition. The diffraction characteristics are consistent with an orthorhombic unit cell (ab=3.86 Å, c=27.19 Å) with space group Ammm. These are the characteristics to be expected from a structure in which extra copper-oxygen layers create fault planes, which are inserted at every unit cell in the parent YBa2Cu3O7x structure. The composition expected for the pure phase is Y2Ba4Cu8O20x. Preliminary transport measurements on films containing this extra phase are characterized by lower normal-state resistances and a lower Hall constant.

  • Received 17 December 1987

DOI:https://doi.org/10.1103/PhysRevB.37.9353

©1988 American Physical Society

Authors & Affiliations

A. F. Marshall, R. W. Barton, K. Char, A. Kapitulnik, B. Oh, and R. H. Hammond

  • Center for Materials Research, Stanford University, Stanford, California 94305

S. S. Laderman

  • Circuit Technology Research and Development, Hewlett Packard Company, 3500 Deer Creek Road, Palo Alto, California 94304

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Vol. 37, Iss. 16 — 1 June 1988

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