Experimental exciton binding energies in GaAs/AlxGa1xAs quantum wells as a function of well width

Emil S. Koteles and J. Y. Chi
Phys. Rev. B 37, 6332 – Published 15 April 1988
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Abstract

In the low-temperature photoluminescence excitation spectra of high-quality GaAs/AlxGa1xAs single quantum wells, we have observed distinctive peaks arising from the first excited level (2s) in addition to the ground state (1s) of heavy- and light-hole excitons. We utilized this accurate determination of the 2s-1s splitting energies to derive the binding energies of the heavy- and light-hole excitons as a function of well width and found good agreement with other similar determinations and with recent theoretical calculations based on models of quantum wells which included valence-band coupling. The agreement with exciton binding energies derived from magneto-optical spectroscopic experiments is satisfactory when comparison is made with recent results.

  • Received 9 November 1987

DOI:https://doi.org/10.1103/PhysRevB.37.6332

©1988 American Physical Society

Authors & Affiliations

Emil S. Koteles and J. Y. Chi

  • GTE Laboratories Incorporated, 40 Sylvan Road, Waltham, Massachusetts 02254

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Issue

Vol. 37, Iss. 11 — 15 April 1988

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