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Electromodulation mechanisms for the uncoupled and coupled states of a GaAs/Ga0.82Al0.18As multiple-quantum-well structure

H. Shen, S. H. Pan, Fred H. Pollak, and R. N. Sacks
Phys. Rev. B 37, 10919(R) – Published 15 June 1988
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Abstract

From a comparison of the thermoreflectance (first-derivative spectroscopy) and photoreflectance [electromodulation (EM)] spectra at 300 K from a GaAs/Ga0.82Al0.18As multiple-quantum-well structure we have obtained important information about the mechanisms of EM for uncoupled and coupled states. For the latter EM produces a third-derivative line shape due to low-field modulation of tunneling states. For the former the two spectra are almost identical, verifying the first-derivative nature of EM at 300 K related to modulation of exciton transitions.

  • Received 24 November 1987

DOI:https://doi.org/10.1103/PhysRevB.37.10919

©1988 American Physical Society

Authors & Affiliations

H. Shen, S. H. Pan*, and Fred H. Pollak

  • Physics Department, Brooklyn College of the City University of New York, Brooklyn, New York 11210

R. N. Sacks

  • United Technologies Research Center, East Hartford, Connecticut 06108

  • *Permanent address: Department of Physics, Nankei University, Tianjin, China.
  • Also at Graduate School and University Center of the City University of New York, New York, NY 10036.

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Vol. 37, Iss. 18 — 15 June 1988

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