High-resolution synchrotron-radiation photoemission and polar-angle-dependent x-ray photoemission have been used to examine the chemistry and atomic profile of the Au/InSb(110) interface. These results show considerable Au-induced disruption and atomic intermixing at low coverage. Mathematical simulations of the experimental polar profiles predict that the atomic densities of both In and Sb decrease exponentially with distance into the Au layer, with concentration gradients for Sb at both the buried interface and the surface due to Sb segregation. Comparisons with other Au-semiconductor interfaces suggest common interface behavior with differences related to substrate bond strengths and semiconductor atom solubilities in Au.

• Received 27 July 1987

DOI:https://doi.org/10.1103/PhysRevB.36.7656