Angle-resolved photoemission from step-related surface states on vicinal surfaces of Si(001)

Chen Xiao-hua; Xu Ya-bo; W. Ranke; Li Hai-yang; Ji Zheng-guo

doi:10.1103/PhysRevB.35.678

Angle-resolved photoemission from step-related surface states on vicinal surfaces of Si(001)

Chen Xiao-hua, Xu Ya-bo, W. Ranke, Li Hai-yang, and Ji Zheng-guo

Phys. Rev. B 35, 678 – Published 15 January 1987

Abstract

Surface states related to atomic steps in the vicinity of Si(001) are observed. For n(001)×(111) steps ([110] azimuth) and n(001)×(101) steps ([100] azimuth) these states are 0.6 and 0.45–0.5 eV below the Fermi level, respectively. This means that they are about 0.1 and 0.2 eV higher than the (001) flat-surface states for normal emission. The dispersion of these edge states is considerably smaller than for the (001) flat-surface states.