An experimental study of the band structures of GaP, GaAs, GaSb, InP, InAs, and InSb has been made with use of polarization-dependent angle-resolved photoemission. We describe an analysis of the data which allowed us to do band mapping (E vs ${\mathrm{k}}_{\perp }$) among some 30 bands both occupied and unoccupied, distributed in the range from 20 eV above to 8 eV below the valence-band maximum. The measurements were made for the 〈110〉 direction Γ–K–X along line Σ in the Brillouin zone. The experiments utilized synchrotron-radiation-induced photoemission in which the polarization of the light and collection angles of the electrons were carefully controlled. We compare the data with calculated band structures and tabulate critical-point energies.

• Received 23 September 1985

DOI:https://doi.org/10.1103/PhysRevB.34.5548