Metal-silicon interfaces and multiple scattering in their low-energy electron diffractions

W. S. Yang, S. C. Wu, and R. G. Zhao
Phys. Rev. B 33, 919 – Published 15 January 1986
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Abstract

After carefully analyzing many interesting experimental phenomena observed with low-energy electron diffraction (LEED) in a series of recent studies on early stages of the formation of many metal-silicon interfaces (Ta/Si, V/Si, Ni/Si, Pd/Si, Pt/Si, Ag/Si, Al/Si), we conclude that all these interfaces, which are defined here as being directly connected to the silicon, have a unique atomic structurecommon interfacial phase, and that this structure produces only kinematic LEED intensity spectra.

  • Received 10 September 1985

DOI:https://doi.org/10.1103/PhysRevB.33.919

©1986 American Physical Society

Authors & Affiliations

W. S. Yang, S. C. Wu, and R. G. Zhao

  • Department of Physics, Peking University, Beijing, China

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Vol. 33, Iss. 2 — 15 January 1986

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