Superconductivity of B1-MoN films annealed under high pressure

H. Ihara, M. Hirabayashi, K. Senzaki, Y. Kimura, and H. Kezuka
Phys. Rev. B 32, 1816 – Published 1 August 1985
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Abstract

B1-phase MoN films, prepared by sputtering, are annealed under a pressure of 6 GPa at temperatures between 600 and 1100 °C for 8 h. The B1-phase MoN is converted mainly to hexagonal-phase and partly to tetragonal-phase Mo2N when annealed at temperatures above 750 °C. A residual phase was observed only at an annealing temperature of 600 °C. The Tco (the onset of Tc) of 1000 °C-annealed films was 14.9 K; this is the maximum value found in the literature for the Mo-N system.

  • Received 28 January 1985

DOI:https://doi.org/10.1103/PhysRevB.32.1816

©1985 American Physical Society

Authors & Affiliations

H. Ihara, M. Hirabayashi, K. Senzaki, Y. Kimura, and H. Kezuka

  • Electrotechnical Laboratory, 1-1-4 Umezono, Sakura-mura, Niihari-gun, Ibaraki 305, Japan

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Issue

Vol. 32, Iss. 3 — 1 August 1985

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