Direct observation of hidden spin polarization in 2HMoTe2

J. Tu, X. B. Chen, X. Z. Ruan, Y. F. Zhao, H. F. Xu, Z. D. Chen, X. Q. Zhang, X. W. Zhang, J. Wu, L. He, Y. Zhang, R. Zhang, and Y. B. Xu
Phys. Rev. B 101, 035102 – Published 3 January 2020
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Abstract

Centrosymmetric (CS) nonmagnetic materials with hidden spin polarization induced by non-CS site symmetries and spin-orbit coupling are promising candidates for spintronic applications, in light of the zero net spin polarization and modulatable spin effects hidden in the local structures. There is, however, an open issue regarding the possible spin splitting induced by broken inversion symmetry at the sample surface. Here, we performed combinatorial experimental and theoretical studies on the potentially hidden spin polarization in 2HMoTe2 and its mechanism. A large spin splitting of 236 meV and opposite spin polarizations up to 80% along out-of-plane direction (z axis) in K and K valleys were observed from both spin- and angle-resolved photoemission spectroscopy (spin-ARPES) and density functional theory (DFT). We further found from the DFT calculations that a medium dipole field mimicked the surface symmetry breaking in ARPES measurements induces negligible variation of spin polarization. Our study demonstrates the existence of the intrinsic hidden spin effects in 2HMoTe2 and opens a way of utilizing these effects in spintronic devices.

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  • Received 17 August 2019
  • Revised 29 November 2019

DOI:https://doi.org/10.1103/PhysRevB.101.035102

©2020 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

J. Tu1,*, X. B. Chen2,*, X. Z. Ruan1,†, Y. F. Zhao1, H. F. Xu1, Z. D. Chen1, X. Q. Zhang1, X. W. Zhang2,‡, J. Wu3, L. He1, Y. Zhang4, R. Zhang1, and Y. B. Xu1,3,§

  • 1Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China
  • 2Shenzhen Key Laboratory of Flexible Memory Materials and Devices, College of Electronic Science and Technology, Shenzhen University, Nanhai Ave. 3688, Shenzhen, Guangdong 518060, China
  • 3York-Nanjing Joint Center in Spintronics, Department of Electronic Engineering and Department of Physics, The University of York, York, YO10 5DD, United Kingdom
  • 4Central Laser Facility, STFC Rutherford Appleton Laboratory, Didcot OX11 0QX, United Kingdom

  • *These authors contributed equally to this work.
  • Correspondence and requests for materials should be addressed to: xzruan@nju.edu.cn
  • Correspondence and requests for materials should be addressed to: xiuwenzhang@szu.edu.cn
  • §Correspondence and requests for materials should be addressed to: ybxu@nju.edu.cn

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Issue

Vol. 101, Iss. 3 — 15 January 2020

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