Optically Rewritable Memory in a Graphene–Ferroelectric-Photovoltaic Heterostructure

D. Kundys, A. Cascales, A. S. Makhort, H. Majjad, F. Chevrier, B. Doudin, A. Fedrizzi, and B. Kundys
Phys. Rev. Applied 13, 064034 – Published 15 June 2020

Abstract

Achieving optical operation of logic elements, especially those that involve two-dimensional (2D) layers, could kick-start the long-awaited era of optical computing. However, efficient optical modulation of the electronic properties of 2D materials, including the rewritable memory effect, is currently lacking. Here we report all-optical control of the conductivity of graphene with write-erase operation yet under ultralow optical fluence. The competition between light-induced charge generation in a ferroelectric-photovoltaic substrate and relaxation processes provides the selective photocarrier-trapping control affecting the doping of the 2D overlayer. These findings open the way to photonic control of 2D devices for all-optical modulators, a variety of all-optical logic circuits, memories, and field-effect transistors.

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  • Received 8 July 2019
  • Revised 20 March 2020
  • Accepted 7 May 2020

DOI:https://doi.org/10.1103/PhysRevApplied.13.064034

© 2020 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

D. Kundys1, A. Cascales2, A. S. Makhort2, H. Majjad2, F. Chevrier2, B. Doudin2, A. Fedrizzi1, and B. Kundys2,*

  • 1Institute of Photonics and Quantum Science, School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS, United Kingdom
  • 2Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504, 23 rue du Loess, 67000 Strasbourg, France

  • *kundys@ipcms.u-strasbg.fr

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Vol. 13, Iss. 6 — June 2020

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