Topology Driven $g$-Factor Tuning in Type-II Quantum Dots

Topology Driven $g$ -Factor Tuning in Type-II Quantum Dots

J.M. Llorens, V. Lopes-Oliveira, V. López-Richard, E.R. Cardozo de Oliveira, L. Wewiór, J.M. Ulloa, M.D. Teodoro, G.E. Marques, A. García-Cristóbal, G.-Q. Hai, and B. Alén

Phys. Rev. Applied 11, 044011 – Published 4 April 2019

Abstract

We investigate how the voltage control of the exciton lateral dipole moment induces a transition from singly to doubly connected topology in type-II $In As$ / ${Ga As}_{x} {Sb}_{1 - x}$ quantum dots. The latter causes visible Aharonov-Bohm oscillations and a change of the exciton $g$ factor, which are modulated by the applied bias. The results are explained in the frame of realistic $\vec{k} \cdot \vec{p}$ and effective Hamiltonian models and could open a venue for new spin quantum memories beyond the $In As$ / $Ga As$ realm.

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Received 17 September 2018
Revised 15 January 2019

DOI:https://doi.org/10.1103/PhysRevApplied.11.044011

Physics Subject Headings (PhySH)

Aharonov-Bohm effect Geometric & topological phases Optoelectronics Photonics Quantum information with hybrid systems Spin-orbit coupling

III-V semiconductors Quantum dots

Quantum Information, Science & TechnologyCondensed Matter, Materials & Applied Physics

Authors & Affiliations

J.M. Llorens¹, V. Lopes-Oliveira², V. López-Richard³, E.R. Cardozo de Oliveira³, L. Wewiór¹, J.M. Ulloa⁴, M.D. Teodoro³, G.E. Marques³, A. García-Cristóbal⁵, G.-Q. Hai⁶, and B. Alén^1,*

¹Instituto de Micro y Nanotecnología, IMN-CNM, CSIC (CEI UAM+CSIC), Isaac Newton, 8, Tres Cantos, Madrid E-28760, Spain
²Universidade Estadual de Mato Grosso do Sul, Dourados, Mato Grosso do Sul 79804-970, Brazil
³Departamento de Física, Universidade Federal de São Carlos, São Carlos, São Paulo 13565-905, Brazil
⁴Institute for Systems based on Optoelectronics and Microtechnology (ISOM),Universidad Politécnica de Madrid, Ciudad Universitaria s/n, Madrid 28040, Spain
⁵Instituto de Ciencia de Materiales (ICMUV), Universidad de Valencia, Paterna E-46980, Spain
⁶Instituto de Física de São Carlos, Universidade de São Paulo, São Carlos, São Paulo 13560-970, Brazil

^*benito.alen@csic.es

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Vol. 11, Iss. 4 — April 2019

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Physical Review Applied