Further study of the over-barrier model to compute charge-exchange processes

Fabio Sattin
Phys. Rev. A 64, 034704 – Published 20 August 2001
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Abstract

In this work we present an improvement over the over-barrier model (OBM) described in a recent paper [F. Sattin, Phys. Rev. A 62, 042711 (2000)]. We show that (i) one of the two free parameters introduced there actually comes out consistently from the starting assumptions underlying the model; (ii) the modified model thus obtained is as much accurate as the former one. Furthermore, we show that OBMs are able to accurately predict some recent results of state-selective electron capture, at odds with what was previously supposed.

  • Received 19 March 2001

DOI:https://doi.org/10.1103/PhysRevA.64.034704

©2001 American Physical Society

Authors & Affiliations

Fabio Sattin*

  • Consorzio RFX, Corso Stati Uniti 4, 35127 Padova, Italy

  • *Email address: sattin@igi.pd.cnr.it

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Vol. 64, Iss. 3 — September 2001

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