Interfacial growth in driven diffusive systems

A. Hernández-Machado, Hong Guo, J. L. Mozos, and David Jasnow
Phys. Rev. A 39, 4783 – Published 1 May 1989
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Abstract

We have studied the growth of interfaces in driven diffusive systems well below the critical temperature by means of Monte Carlo simulations. We consider the region beyond the linear regime and of large values of the external field which has not been explored before. The simulations support the existence of interfacial traveling waves when asymmetry is introduced in the model, a result previously predicted by a linear-stability analysis. Furthermore, the generalization of the Gibbs-Thomson relation is discussed. The results provide evidence that the external field is a stabilizing effect which can be considered as effectively increasing the surface tension.

  • Received 7 November 1988

DOI:https://doi.org/10.1103/PhysRevA.39.4783

©1989 American Physical Society

Authors & Affiliations

A. Hernández-Machado

  • Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 15260

Hong Guo

  • Department of Physics, Lehigh University, Bethlehem, Pennsylvania 18015

J. L. Mozos

  • Departamento de Estructura y Constituyentes de la Materia, Universidad de Barcelona, Av. Diagonal 647, E-08028 Barcelona, Spain

David Jasnow

  • Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 15260

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Issue

Vol. 39, Iss. 9 — May 1989

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