Figure 1

Proposed configuration for the electric resonances of a single Mn dopant in GaAs. A dc electric field ${\mathbf{E}}_{\mathrm{dc}}$ is applied via the electrical gates and the STM tip. The resonance is driven by an additional small ac field.Reuse & Permissions

Figure 2

The ionic spin system as a function of the dc field orientation. (a) The energies of the $J=1$ states ${\xi }_1$ (solid line), ${\xi }_2$ (dashed line), and ${\xi }_3$ (dotted line). (b) The corresponding eigenvectors parametrized by the angle $\Theta$. (c) The coupling between $|{\xi }_1⟩$ and $|{\xi }_2⟩$ due to the ac field. (d) The scaled LDOS of the two possible final states $|{\xi }_1⟩$ (solid line) and $|{\xi }_2⟩$ (dashed line) probed four monoatomic layers directly above the Mn dopant.Reuse & Permissions

Figure 3

Schematics of controlling the spin states via local band bending. The dotted-dashed lines show the chemical potential. The shaded regions are filled states. CB and VB label the conduction and valence bands of the semiconductor, respectively. (a) Initialization: For this voltage, occupation of the $|{\xi }_1⟩$ state dominates. (b) Manipulation: Bring all the states into the gap but control the bias voltage below the threshold where the current starts to tunnel through these states. The oscillating field ($E_{\mathrm{ac}}$) drives transitions between the $|{\xi }_1⟩$ and the $|{\xi }_2⟩$ states. (c) Detection: Bring the final state further into the gap, so that electrons can tunnel from the tip into the acceptor state. The final state is identified according to the amplitude of the tunneling current [Fig. 2d].Reuse & Permissions